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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH PERFORMANCE VOLTAGE COMPARATORS The ability to operate from a single power supply of 5.0 V to 30 V or ±15 V split supplies, as commonly used with operational amplifiers, makes the LM211/LM311 a truly versatile comparator. Moreover, the inputs of the device can be isolated from system ground while the output can drive loads refer | ONSEMI 安森美半导体 |   | ||
Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv | NTE | | ||
Voltage Comparator 文件：1.08989 Mbytes Page：23 Pages | NSC 国半 | | ||
Voltage Comparator 文件：1.08989 Mbytes Page：23 Pages | NSC 国半 | | ||
C-MOS QUAD SPST ANALOG SWITCH 文件：156.78 Kbytes Page：4 Pages | NJRC 日本无线 | |
BSL211SPT产品属性
- 类型
描述
- 型号
BSL211SPT
- 功能描述
MOSFET P-CH 20V 4.7A 6-TSOP
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
OptiMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NTE |
23+ |
65480 |
BSL211SPT规格书下载地址
BSL211SPT参数引脚图相关
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DdatasheetPDF页码索引
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