P沟道增强型场效应晶体管 (FET)，-20 V，TSOP-6

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

OptiMOS -P Small-Signal-Transistor

文件：76.01 Kbytes Page：8 Pages

OptiMOS-P Small-Signal-Transistor

文件：589.43 Kbytes Page：8 Pages

OptiMOS-P Small-Signal-Transistor

文件：589.43 Kbytes Page：8 Pages

HIGH PERFORMANCE VOLTAGE COMPARATORS

The ability to operate from a single power supply of 5.0 V to 30 V or ±15 V split supplies, as commonly used with operational amplifiers, makes the LM211/LM311 a truly versatile comparator. Moreover, the inputs of the device can be isolated from system ground while the output can drive loads refer

Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

Voltage Comparator

文件：1.08989 Mbytes Page：23 Pages

Voltage Comparator

文件：1.08989 Mbytes Page：23 Pages

C-MOS QUAD SPST ANALOG SWITCH

文件：156.78 Kbytes Page：4 Pages