N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Low threshold voltage ■ Subminiature surface mount package. Applications ■

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. 2. Features n TrenchMOS™ technology n Very fast switching n Low threshold voltage n Subminiature surface mount package. 3. Applicat

N-channel enhancement mode field-effect transistor

N-channel TrenchMOS extremely low level FET

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Temperature Sensors Line Guide

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Precision Wirewound Resistors

文件：318.25 Kbytes Page：2 Pages

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

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