N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Low threshold voltage ■ Subminiature surface mount package. Applications ■ Batte

N-channel enhancement mode field-effect transistor

55 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic

MOSFET N-CH 55V 0.335A SOT23

55 V, N-channel Trench MOSFET

55 V, N-channel Trench MOSFET

文件：289.04 Kbytes Page：16 Pages

Pico SIL/SIP Reed Relays

— Including 1.5 GHz coaxial types — Stacks on 0.15 x 0.40 inches pitch — Highest quality instrumentation grade switches — Mu-metal magnetic screening — Two package styles - mu-metal package or plastic package with internal mu-metal magnetic screen — They take up the minimum of board area, con

1/4 ENCLOSED PHONE JACKS

文件：94.03 Kbytes Page：5 Pages

Protective Covers Ultrasonically-welded with Strain Relief

文件：622.5 Kbytes Page：1 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

111/519 Series 5mm Fuse Clips Taped for Automated Insertion

文件：1.35386 Mbytes Page：1 Pages