N-channel enhancement mode MOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH107 is supplied in the SOT457 subminiat

N-channel enhancement mode MOS transistor

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 6.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 6.0 Twists/foot (m

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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Smooth, high torque, roller ratchet handle

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