N-channelenhancementmodeMOStransistor

GENERALDESCRIPTION N-channel,enhancementmode,logiclevel,field-effectpowertransistor.Thisdevicehasverylowthresholdvoltageandextremelyfastswitchingmakingitidealforbatterypoweredapplicationsandhighspeeddigitalinterfacing. TheBSH106issuppliedintheSOT363subminiat

PrecisionWirewoundResistors

100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst

CustomerSpecification

Construction Diameters(In) 1)Component15X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.049 (1)Color(s) CondColorCondColorCondColor 1BLACK3 GREEN/YELLOW 5WHITE 2BLUE4BROWN 2)CableAssembly5ComponentsCabled a)

CustomerSpecification

Construction Diameters(In) 1)Component15X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.049 (1)Color(s) CondColorCondColorCondColor 1BLACK3 GREEN/YELLOW 5WHITE 2BLUE4BROWN 2)CableAssembly5ComponentsCabled a)

PrecisionWirewoundResistors

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ElectricalIndustryLamps

文件：32.8 Kbytes Page：1 Pages