N-channel enhancement mode MOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH106 is supplied in the SOT363 subminiat

N-channel enhancement mode MOS transistor

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

106/206 In-Line Flanged Diaphragm Seals

FEATURES „ 316L Stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging „ Large 21/2˝ diaphragm compatible with most Ashcroft instrumentation

Precision Wirewound Resistors

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