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BSC112N06LD

丝印代码:112N06LD;OptiMOSTM-T2PowerTransistor,60V

Features ·DualN-channel,Logiclevel ·FastswitchingMOSFETsforSMPS ·OptimizedtechnologyforSynchronousRectification ·Pb-freeplating;RoHScompliant ·100%Avalanchetested ·SuperiorThermalResistance ·Halogen-freeaccordingtoIEC61249-2-21 ProductValidation Qualifiedforindustrialapplicationsaccor

INFINEON

英飞凌

BSC112N06LD

OptiMOS™ 功率 MOSFET

\n优势:\n• Dual Super SO8 package for high power density (smallest footprint)\n• Superior thermal resistance\n• High operating temperature up to 175°C\n• High shot-through immunity due to Qgd/Qgs<0.8\n• Pb-free plating, RoHS compliant;

INFINEON

英飞凌

BSC112N06LD

丝印代码:112N06LD;Optimos-T2 Power Transistor, 60 V

文件:1.76275 Mbytes Page:11 Pages

INFINEON

英飞凌

OptiMOSTM-T2PowerTransistor,60V

Features ·DualN-channel,Logiclevel ·FastswitchingMOSFETsforSMPS ·OptimizedtechnologyforSynchronousRectification ·Pb-freeplating;RoHScompliant ·100%Avalanchetested ·SuperiorThermalResistance ·Halogen-freeaccordingtoIEC61249-2-21 ProductValidation Qualifiedforindustrialapplicationsaccor

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). Features ■ Fast switching ■ Very low on-state resistance. Applications ■ Genera

PHILIPS

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). Features ■ Fast switching ■ Very low on-state resistance. Applications ■ Genera

PHILIPS

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

BSC112N06LD产品属性

  • 类型

    描述

  • OPN:

    BSC112N06LDATMA1

  • Qualification:

    Non-Automotive

  • Package name:

    PG-TDSON-8

  • VDS max:

    60 V

  • RDS (on) @10V max:

    11.2 mΩ

  • RDS (on) @4.5V max:

    15.8 mΩ

  • ID @25°C max:

    20 A

  • QG typ @10V:

    41 nC

  • Polarity:

    N+N

  • Operating Temperature min:

    -55 °C

  • Operating Temperature max:

    175 °C

  • VGS(th) min:

    1.2 V

  • VGS(th) max:

    2.2 V

  • Technology:

    OptiMOS™ 3

更新时间:2026-8-5 8:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
25
PG-TDSON-8
6000
原装正品
INFINE0N
21+
SuperSO8 dual
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
INFINEON
23+
DTSON8
5000
英飞凌汽车电子优势
Infineon/英飞凌
24+
PG-TDSON-8
8000
只做原装,欢迎询价,量大价优
Infineon/英飞凌
26+
PG-TDSON-8
25000
原装正品,假一赔十!
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon/英飞凌
25+
PG-TDSON-8
12700
买原装认准中赛美
Infineon/英飞凌
21+
PG-TDSON-8
6820
只做原装,质量保证
Infineon
25+
PG-TDSON-8
15500
英飞凌优势渠道全系列在售
INFINEON/英飞凌
2511
PG-TDSON-8
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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