N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). Features ■ Fast switching ■ Very low on-state resistance. Applications ■ Genera

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel enhancement mode field-effect transistor

丝印代码：112N06LD；OptiMOSTM-T2PowerTransistor,60V

Features ·DualN-channel,Logiclevel ·FastswitchingMOSFETsforSMPS ·OptimizedtechnologyforSynchronousRectification ·Pb-freeplating;RoHScompliant ·100%Avalanchetested ·SuperiorThermalResistance ·Halogen-freeaccordingtoIEC61249-2-21 ProductValidation Qualifiedforindustrialapplicationsaccor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

丝印代码：112N06LD；Optimos-T2 Power Transistor, 60 V

文件：1.76275 Mbytes Page：11 Pages