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BSC110N06NS价格
参考价格：￥2.0282
型号：BSC110N06NS3G 品牌：INFINEON 备注：这里有BSC110N06NS多少钱，2025年最近7天走势，今日出价，今日竞价，BSC110N06NS批发/采购报价，BSC110N06NS行情走势销售排行榜，BSC110N06NS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOS3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Quali | Infineon 英飞凌 |   | ||
N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
OptiMOSTM3 Power-Transistor 文件：398.95 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOSTM3 Power-Transistor 文件：398.95 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：2.10135 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
BSC110N06NS产品属性
- 类型
描述
- 型号
BSC110N06NS
- 功能描述
MOSFET OptiMOS2 PWR Transistor N-CH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TDSON-8 |
4845 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
原装 |
25+ |
DFN5x6 |
20300 |
原装特价BSC110N06NS3GATMA1即刻询购立享优惠#长期有货 |
|||
INFINEON |
100000 |
代理渠道/只做原装/可含税 |
|||||
INENOI |
20+ |
TDSON-8 |
1435 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
23+ |
TDSON-8 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
24+ |
PG-TDSON-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON |
QFN |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
25+ |
QFN |
30000 |
全新原装现货,价格优势 |
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BSC110N06NS规格书下载地址
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