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BSC110N06NS价格
参考价格：￥2.0282
型号：BSC110N06NS3G 品牌：INFINEON 备注：这里有BSC110N06NS多少钱，2026年最近7天走势，今日出价，今日竞价，BSC110N06NS批发/采购报价，BSC110N06NS行情走势销售排行榜，BSC110N06NS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOS3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Quali | INFINEON 英飞凌 |   | ||
N 沟道功率 MOSFET | INFINEON 英飞凌 | | ||
OptiMOSTM3 Power-Transistor 文件：398.95 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOSTM3 Power-Transistor 文件：398.95 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：2.10135 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
BSC110N06NS产品属性
- 类型
描述
- 型号
BSC110N06NS
- 功能描述
MOSFET OptiMOS2 PWR Transistor N-CH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
EFN8 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon/英飞凌 |
25+ |
PG-TDSON-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON |
25+23+ |
QFN |
36026 |
绝对原装正品全新进口深圳现货 |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
原装 |
25+ |
DFN5x6 |
20300 |
原装特价BSC110N06NS3GATMA1即刻询购立享优惠#长期有货 |
|||
INFINEON |
QFN |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON/英飞凌 |
2025+ |
TDSON |
2943 |
原装进口价格优 请找坤融电子! |
|||
INFINEON/英飞凌 |
25+ |
QFN |
30000 |
全新原装现货,价格优势 |
|||
Infineon(英飞凌) |
2447 |
PG-TDSON-8 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON/英飞凌 |
23+ |
PG-TDSON-8 |
50000 |
全新原装正品现货,支持订货 |
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BSC110N06NS规格书下载地址
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DdatasheetPDF页码索引
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