位置：首页 > IC中文资料第288页 > BSC100N03MSGXT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Rectifier Diodes FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation | EVVOSEMI 翊欧 |   | ||
N-Channel Enhancement Mode Power MOSFET Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired | TECHPUBLIC 台舟电子 | | ||
30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances | UMW 友台半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.62203 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
90A竊?0V N-CHANNEL MOSFET 文件：212.13 Kbytes Page：5 Pages | KIA 可易亚半导体 | |
BSC100N03MSGXT产品属性
- 类型
描述
- 型号
BSC100N03MSGXT
- 制造商
Infineon Technologies AG
- 功能描述
TRANS MOSFET N-CH 30V 12A 8PIN TDSON - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
TRANS MOSFET N-CH 30V 12A 8PIN TDSON - Cut TR(SOS)
- 制造商
Infineon Technologies
- 功能描述
Infineon Technologies BSC100N03MSGXT MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
INFINEON |
07+ |
QFN-85X6 |
6000 |
绝对原装自己现货 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
UTC/友顺 |
24+ |
NA |
8000 |
只做原装，欢迎询价，量大价优 |
|||
UMW(友台半导体) |
24+ |
TO-252 |
7500 |
加QQ:78517935原装正品有单必成 |
|||
SANYO/三洋 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
UMW(友台半导体) |
25+ |
DIP |
2200 |
国产替换现货降本 |
|||
UTC/友顺 |
23+ |
TO-220 |
40000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
UMW 友台 |
23+ |
TO-252 |
12500 |
原装正品，实单请联系 |
|||
INFINEON |
24+ |
QFN8 |
8500 |
特级特价超低价原装正品假一罚百 |
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BSC100N03MSGXT规格书下载地址
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-9
DdatasheetPDF页码索引
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