OptiMOSTM 5 Power-Transistor, 150 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • 175 °C operating temperature • Pb-free lead plating; RoHS com

OptiMOS ™ 5 功率 MOSFET 150 V，采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

3300 W 54 V bi-directional phase-shift fullbridge with 600 V CoolMOS CFD7 and XMC

Scope and purpose This document introduces a complete Infineon Technologies AG system solution for a 3300 W bi-directional DC-DC converter that achieves 98 percent efficiency in buck mode and 97 percent in boost mode. The EVAL_3K3W_BIDI_PSFB board is a DC-DC stage with telecom-level output real

OptiMOSTM 5 Power-Transistor, 150 V

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