N 沟道功率 MOSFET

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the \n优势:\n• Save overall system costs by reducing the number of phases in multiphase converters\n• Reduce power losses and increase efficiency for all load conditions\n• Save space with smallest packages like CanPAK™, S3O8 or system in package solution\n• Minimize EMI in the system making external snub;

Dual N-Channel OptiMOS??MOSFET

文件：743.63 Kbytes Page：14 Pages

L, S BAND POWER GaAs FET

DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power P1dB=41.0dBm(TYP.) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E =40(TY

PHOTO-INTERRUPTER

文件：150.47 Kbytes Page：3 Pages

L, S BAND POWER GaAs FET

文件：36.78 Kbytes Page：4 Pages

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes Page：2 Pages

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes Page：2 Pages