L, S BAND POWER GaAs FET

DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power P1dB=41.0dBm(TYP.) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E =40(TY

L, S BAND POWER GaAs FET

文件：36.78 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：216.7 Kbytes Page：4 Pages

L, S BAND POWER GaAs FET

L, S BAND POWER GaAs FET

文件：36.78 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：216.7 Kbytes Page：4 Pages

Graphite Brush

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Dual N-Channel OptiMOS??MOSFET

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PIEZO SOUND GENERATORS

文件：66.66 Kbytes Page：1 Pages