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BSC025N03价格
参考价格：￥3.1548
型号：BSC025N03LSG 品牌：INFINEON 备注：这里有BSC025N03多少钱，2025年最近7天走势，今日出价，今日竞价，BSC025N03批发/采购报价，BSC025N03行情走势销售排行榜，BSC025N03报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc | Infineon 英飞凌 |   | ||
OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc | Infineon 英飞凌 | | ||
OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications | Infineon 英飞凌 | | ||
OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications | Infineon 英飞凌 | | ||
N-Channel 30V(D-S) Enhancement MOSFET Application i & Load/Power switch | Interfacing, logic switching «Battery management for ultra protable * electronics | | TECHPUBLIC 台舟电子 | | ||
N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc | Infineon 英飞凌 | | ||
OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications | Infineon 英飞凌 | |
BSC025N03产品属性
- 类型
描述
- 型号
BSC025N03
- 功能描述
MOSFET OptiMOS 3 PWR-MOSFET 30V 100A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TDSON-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
28998 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
2023+ |
QFN8 |
8601 |
一级代理优势现货,全新正品直营店 |
|||
INFINEON/英飞凌 |
22+ |
TDSON-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
2450+ |
QFN |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
13+ |
QFN |
1642 |
||||
Infineon/英飞凌 |
21+ |
PG-TDSON-8 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
SuperSO8 |
8866 |
||||
INFINEON/英飞凌 |
2019+ |
TDSON-8 |
3333 |
原厂渠道 可含税出货 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
BSC025N03规格书下载地址
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2020-10-9BSC018NE2LS
产品属性 属性值 搜索类似 制造商: Infineon 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: SMD/SMT 封装 / 箱体: TDSON-8 通道数量: 1 Channel 晶体管极性: N-Channel Vds-漏源极击穿电压: 25 V Id-连续漏极电流: 100 A Rds On-漏源导通电阻: 1.8 mOhms Vgs - 栅极-源极电压: 20 V Vgs
2019-10-11
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