Touch Key

The BS801B/02B/04B/06B/08B are a range of 1 to 8 key touch key devices which can detect human body contact using external touch pads. The high level of device integration enable applications to be implemented with a minimum number of external components. * Operating voltage: 2.2V~5.5V * Ultra

Touch Key

BS801B/02B/04B/06B/08B具有1到8个触摸按键，可用来检测外部触摸按键上人手的触摸动作。该系列的芯片具有较高的集成度，使用较少的外部元件便可实现触摸按键的应用。\n\n BS804B 和BS808B 还提供了一个单线串行接口，可方便与外部MCU之间的通讯，实现对芯片设置以及触摸引脚按键检测的目的。\n\n 芯片内部集成电路具有高电源电压抑制比，可减少按键检测错误的发生，这一特性保证在不利环境条件的应用中芯片仍具有很高的可靠性。此系列的触摸芯片具有自动校准功能，低待机电流，唤醒模式可选等特性，为各种触摸按键的应用提供了一种简单而又有效的实现方法。\n\n • 工作电压: 2.2V~5.5V\n• 超低静态电流：1.5µA at 3V\n• 自动校准功能\n• 可靠的按键检测功能\n• 高电源电压抑制比\n• Level-Hold 或者Toggle 输出\n• One-Key或Any-Key唤醒模式\n• 引脚或串口命令可设置唤醒模式\n• 开漏极NMOS输出\n• 通过引脚或串口检测按键状态;

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat