SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free

Silicon Bridge Rectifiers 8 Amps to 10 Amps

Silicon Bridge Rectifiers 8 Amps to 10 Amps The plastic material carries U/L recognition 94 V-O

SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Bridges: 6.0 to 8.0 amps

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes FEATURES ● Surge overload rating -175 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES ● Surge overload rating -175 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

桥式整流器

BR8/IF:8A/ Vol:50V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/

SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Bridge Rectifier

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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