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型号 功能描述 生产厂家 企业 LOGO 操作
BR4N60

N-CHANNEL MOSFET in a TO-220 Plastic Package

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FOSHAN

蓝箭电子

BR4N60

高压MOS>200V

FOSHAN

蓝箭电子

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

BR4N60产品属性

  • 类型

    描述

  • PD:

    100 (W)

  • ID:

    4 (A)

  • V(BR) DSS:

    600 (V)

  • RDS(on) (MAX):

    2.5 Ω  2 ID(A)  10 VGS(V)

  • VGS(Th):

    2.0~4.0 V  250 ID(μA)

  • 封装:

    TO-220 Package

更新时间:2026-5-25 10:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
BLUEROCKET
2022+
TO-220
32500
原厂代理 终端免费提供样品
蓝箭
23+
TO-252
50000
全新原装正品现货,支持订货
FAIRCHIL
TO-220
6500
一级代理 原装正品假一罚十价格优势长期供货
蓝箭
25+
TO-252
90000
全新原装现货
蓝箭
2015+
TO220
28989
一级代理原装现货,特价热卖!
蓝箭
10+
TO-252
1608
全新 发货1-2天
BLUEROCKET
20+
TO-220
32500
现货很近!原厂很远!只做原装

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