TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES * Surge overload ratings-300 Amperes * Plastic case with heatsink for Maximum Heat * Low forward voltage drop

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes FEATURES ● Low cost ● This series is UL recognized under component index, file number E127707 ● High forward surge current capability ● Integrally molded heatsink provide very low thermal resistance ● High isolation voltage from case to l

SILICON BRIDGE RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 15.0 Amperes FEATURES ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ Ideal for printed circuit boards ◆ Low reverse leakage ◆ High forward surge current capability ◆ High temperature solderin

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES • Low cost • This series is UL recognized under component index, file number E127707 • High forward surge current capability • Intergrally molded heatsink provide very low thermal resistance. • High isolation voltage from case to leads. • High temperature soldering guarantee

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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