TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES * Surge overload ratings-300 Amperes * Plastic case with heatsink for Maximum Heat * Low forward voltage drop

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes FEATURES ● Low cost ● This series is UL recognized under component index, file number E127707 ● High forward surge current capability ● Integrally molded heatsink provide very low thermal resistance ● High isolation voltage from case to l

SILICON BRIDGE RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 15.0 Amperes FEATURES ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ Ideal for printed circuit boards ◆ Low reverse leakage ◆ High forward surge current capability ◆ High temperature solderin

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES • Low cost • This series is UL recognized under component index, file number E127707 • High forward surge current capability • Intergrally molded heatsink provide very low thermal resistance. • High isolation voltage from case to leads. • High temperature soldering guarantee

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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