位置:首页 > IC中文资料 > BOS802

BOS802价格

参考价格:¥150.0536

型号:BOS802 品牌:Rose Bopla 备注:这里有BOS802多少钱,2026年最近7天走势,今日出价,今日竞价,BOS802批发/采购报价,BOS802行情走势销售排行榜,BOS802报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

MOTOROLA

摩托罗拉

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

MOTOROLA

摩托罗拉

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

MOSPEC

统懋

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

更新时间:2026-5-19 16:01:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
TO-220
10000
全新
ON/安森美
22+
TO-126
97164
ON/安森美
22+
TO-126
6000
十年配单,只做原装

BOS802数据表相关新闻