Axial Lead and Cartridge Fuses - Midget

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Power LDMOS transistor

A 135 W LDMOS transistor for non cellular communication and industrial applications. The excellent ruggedness of this device makes it ideal for mobile NCC and ISM applications in the frequency range from HF to 1300 MHz. • Designed for broadband operation\n• Integrated dual sided ESD protection\n• High power gain\n• Easy power control\n• For RoHS compliance see the product details on the Ampleon website\n;

HF / VHF power LDMOS transistor

A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band. • Easy power control\n• Excellent ruggedness\n• Excellent thermal stability\n• For RoHS compliance see the product details on the Ampleon website\n;

HF / VHF power LDMOS transistor

A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band. • Easy power control\n• Integrated ESD protection\n• Excellent ruggedness\n• High efficiency\n• Excellent thermal stability\n• Designed for broadband operation (10 MHz to 700 MHz)\n• For RoHS compliance see the product details on the Ampleon website;

HF / VHF power LDMOS transistor

General description A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for

HF / VHF power LDMOS transistor

General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed fo

Power LDMOS transistor

General description A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

Power LDMOS transistor

General description A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

RF Manual 16th edition

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

Base station LDMOS transistors

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Base station LDMOS transistors

文件：137.94 Kbytes Page：13 Pages

封装/外壳：SOT-539A 包装：散装 描述：BLF978P/SOT539/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-1121B 包装：散装 描述：BLF984PS/SOT1121/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

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Power LDMOS transistor

文件：156.86 Kbytes Page：12 Pages

Power LDMOS transistor

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