Axial Lead and Cartridge Fuses - Midget

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HF / VHF power LDMOS transistor

General description A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for

HF / VHF power LDMOS transistor

General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed fo

Power LDMOS transistor

General description A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

Power LDMOS transistor

General description A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

RF Manual 16th edition

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

Base station LDMOS transistors

文件：137.94 Kbytes Page：13 Pages

Base station LDMOS transistors

文件：137.94 Kbytes Page：13 Pages

HF / VHF power LDMOS transistor

HF / VHF power LDMOS transistor

封装/外壳：SOT-539A 包装：散装 描述：BLF978P/SOT539/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

封装/外壳：SOT-1121B 包装：散装 描述：BLF984PS/SOT1121/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

文件：457.51 Kbytes Page：18 Pages

Power LDMOS transistor

文件：156.86 Kbytes Page：12 Pages

Power LDMOS transistor

文件：220.5 Kbytes Page：15 Pages