Power LDMOS transistor

General description A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

Power LDMOS transistor

A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. • Designed for broadband and Doherty operation\n• High efficiency\n• Integrated double sided ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• Excellent stability\n• For RoHS compliance see the product details on the Ampleon website;

Power LDMOS transistor

A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. • Designed for broadband and Doherty operation\n• High efficiency\n• Integrated double sided ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• Excellent stability\n• For RoHS compliance see the product details on the Ampleon website;

Power LDMOS transistor

General description A 450 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

封装/外壳：SOT-1121B 包装：散装 描述：BLF984PS/SOT1121/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-1121A 包装：散装 描述：BLF984P/SOT1121/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

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