UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

UHF power LDMOS transistor

A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. • Designed for broadband and Doherty operation\n• High efficiency\n• Integrated dual sided ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• Excellent stability\n• For RoHS compliance see the product details on the Ampleon website;

包装：管件 描述：RF FET 分立半导体产品 晶体管 - FET，MOSFET - 射频

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. • Designed for asymmetric Doherty operation\n• Very high efficiency enabling air cooled high power transmitters\n• Integrated ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• For RoHS compliance see the product details on the Ampleon website;

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

UHF power LDMOS transistor

A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. • Designed for broadband and Doherty operation\n• High efficiency\n• Integrated dual sided ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• Excellent stability\n• For RoHS compliance see the product details on the Ampleon website;

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BLF989E/SOT539/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • UHF applications such

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of hFE. • Complementary to KTD1352.

Micropower, Low-Voltage, SOT23, Rail-to-Rail I/O Comparators

General Description The MAX985/MAX986/MAX989/MAX990/MAX993/MAX994 single/dual/quad micropower comparators feature low-voltage operation and rail-to-rail inputs and outputs. Their operating voltages range from 2.5V to 5.5V, making them ideal for both 3V and 5V systems. These comparators also ope

LEADLESS GLASS ZENER DIODE SURFACE MOUNT

Features • Leadless Package For Surface Mount Technology • Ideal For High Density Mounting • Voltage Range 6.8 To 200 Volts • Hermetically Sealed, Double Slug Glass Construction • Metallurgically Bonded Construction Available as Dash One. • Available in JAN, JTX, JTXV-1 to Mil-PR

Integrated Circuit General Purpose Phase Lock Loop (PLL)

Description: The NTE989 is a general purpose Phase Locked Loop (PLL) in a 14–Lead DIP type package containing a stable, highly linear voltage controlled oscillator for low distortion FM demodulation, and a double balanced phase detector with good carrier suppression. The VCO frequency is set with