封装/外壳：SOT-539B 包装：管件 描述：RF MOSFET LDMOS 50V SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895A, BD897A and BD899A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

UHF linear power transistor

DESCRIPTION NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. FEATURES • Internal input matching for wideband operation and high power ga

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850–960 MHz. • Motorola Advanced Amplifier Concept Package • Specified 24 Volt, 900 MHz Characteristi