Axial Lead and Cartridge Fuses - Midget

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VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

VHF linear push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides th

RF POWER VDMOS TRANSISTOR

DESCRIPTION: The ASI BLF368 is a Dual Common Source N-Channel Enhancement Mode VDMOS. designed for RF Applications.

VHF power LDMOS transistor

General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Features ■ Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: ◆ Load power PL = 500

Multi-use VHF power LDMOS transistor

RF Manual 16th edition

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

POWER MOSFET

DESCRIPTION: The ASI BLF378 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for broadband RF Applications up to 225 MHz. FEATURES INCLUDE: • PG = 14 dB Min. at 225 MHz • 20:1 Load VSWR Capability • Omnigold™ metalization system

RF Manual 16th edition

RF Manual 16th edition

Axial Lead and Cartridge Fuses - Midget

文件：78.82 Kbytes Page：1 Pages

VHF power MOS transistor

文件：94.33 Kbytes Page：16 Pages

VHF power MOS transistor

文件：94.33 Kbytes Page：16 Pages

VHF linear push-pull power MOS transistor

RF MOSFET

封装/外壳：SOT-262A1 包装：托盘 描述：RF FET 2 NC 65V 13.5DB SOT262A1 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF push-pull power MOS transistor

文件：112.36 Kbytes Page：16 Pages

VHF push-pull power MOS transistor

文件：112.36 Kbytes Page：16 Pages

VHF power LDMOS transistor

UHF power LDMOS transistor

封装/外壳：SOT-467C 包装：托盘 描述：RF FET LDMOS 65V 13.5DB SOT467C 分立半导体产品 晶体管 - FET，MOSFET - 射频

UHF power LDMOS transistor

UHF power LDMOS transistor