VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides th

RF POWER VDMOS TRANSISTOR

DESCRIPTION: The ASI BLF368 is a Dual Common Source N-Channel Enhancement Mode VDMOS. designed for RF Applications.

RF MOSFET

封装/外壳：SOT-262A1 包装：托盘 描述：RF FET 2 NC 65V 13.5DB SOT262A1 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF push-pull power MOS transistor

文件：112.36 Kbytes Page：16 Pages

VHF push-pull power MOS transistor

文件：112.36 Kbytes Page：16 Pages

Amplifier Transistors

Amplifier Transistors

Amplifier Transistors

Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features • Pb−Free Packages are Available*

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-92; SOT54 plastic package. PNP complement: BC369. FEATURES • High current (1 A) • Low voltage (20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz

Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB E