VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

VHF power MOS transistor

封装/外壳：SOT-119A 包装：托盘 描述：RF FET NCHA 65V 16DB SOT119A 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF power MOS transistor

文件：94.33 Kbytes Page：16 Pages

VHF power MOS transistor

文件：94.33 Kbytes Page：16 Pages

PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

Programmable Quad Operational Amplifiers

文件：727.78 Kbytes Page：17 Pages

Programmable Quad Operational Amplifiers

文件：727.78 Kbytes Page：17 Pages