RF POWER MOSFET

DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 16 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system

RF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION:\nThe ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range.FEATURES INCLUDE:\n• PG = 16 dB Typical at 175 MHz\n• 30:1 Load VSWR Capability\n• Omnigold™ metalization system

VHF power MOS transistor

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NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages