Axial Lead and Cartridge Fuses - Midget

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HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transm

RF Manual 16th edition

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

UHF power LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19 – ACPR = −42 dBc at 3.84

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA: – Output power = 3.5 W (AV) – Gain = 12.9 dB – Efficiency = 16.5 – ACPR = −45 dBc

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband

UHF power LDMOS transistor

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: – Output power = 7.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc at 3.

UHF power LDMOS transistor

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: – Output power = 11.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc a

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26V and IDQ of 500 mA - Output power =30W (PEP) - Gain = 12.5 dB - Efficiency = 32 - dlm = -26dBc • Easy

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

LTCC(低温共烧陶瓷)滤波器

WIRELESS COMPONENTS

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2012 2.4-2.5GHz Combo

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WIRELESS COMPONENTS

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LTCC(低温共烧陶瓷)滤波器

封装/外壳：0805（2012 公制） 包装：管件 描述：BALUN 2.4GHZ-2.5GHZ 0805 RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

LTCC(低温共烧陶瓷)滤波器

Combo

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封装/外壳：SOT-409A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET NCHA 40V 13DB SOT409A 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF/VHF power MOS transistor

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HF/VHF power MOS transistor

文件：90.51 Kbytes Page：16 Pages

UHF power LDMOS transistor

文件：103.84 Kbytes Page：12 Pages

UHF power LDMOS transistor

文件：103.84 Kbytes Page：12 Pages

UHF power LDMOS transistor

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UHF power LDMOS transistor

文件：103.84 Kbytes Page：12 Pages