DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange.

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Designed for broadband operation (2.0 to 2.2 GHz)

• Internal input and output matching for high gain and efficiency

• Improved linearity at backoff levels.

APPLICATIONS

• Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range

• Suitable for GSM, Edge, CDMA and WCDMA applications.