HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transm

RF Manual 16th edition

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

UHF power LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19 – ACPR = −42 dBc at 3.84

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA: – Output power = 3.5 W (AV) – Gain = 12.9 dB – Efficiency = 16.5 – ACPR = −45 dBc

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband

UHF power LDMOS transistor

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: – Output power = 7.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc at 3.

UHF power LDMOS transistor

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: – Output power = 11.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc a

封装/外壳：SOT-409A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET NCHA 40V 13DB SOT409A 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF/VHF power MOS transistor

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HF/VHF power MOS transistor

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1 3/4 (44.5 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Large range of ohmic values: 5  to 65 k • Screw, servo or bushing mount types available • Up to 6 sections on the same shaft • Extra taps upon request • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

ROD SEALS

DESCRIPTION The BECA 202 is a compo-compact rod seal composed of a flexible NBR ring, a fabric NBR support on the back and a polyoxymethylene back-up ring. APPLICATIONS Hydraulic cylinders Earth-moving machinery Mining machinery

M12-A Female 4 Pin Field Attachable

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FLAT-PAK Fast Acting Fuse202 Series

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Direct replacement for French Style T1 Midget Flange SX3s

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