| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BG2301K | MOSFET | BGSEMI |   | |
Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin | NTE | | ||
Reflective Photosensor 文件：49.97 Kbytes Page：2 Pages | PANASONIC 松下 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER 文件：324.91 Kbytes Page：22 Pages | TI 德州仪器 | |
BG2301K产品属性
- 类型
描述
- Type：
P-Channel Enhancement
- Voltage (V)：
-20
- Current (A)：
-2.8
- Rdson (Ohm)_TYP：
90m
- Rdson (Ohm)_MAX：
112m
- Available Available：
SOT-23
BG2301K规格书下载地址
BG2301K参数引脚图相关
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BG2301K数据表相关新闻
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DdatasheetPDF页码索引
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