NPN 6 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. FEATURES • High power gain • Low noise figure • Very low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

isc Silicon NPN RF Transistor

DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators.

Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

RF Manual 16th edition

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High power gain, low noise figure, very low intermodulation distortion. Applications RF wideband amplifiers and oscillators.

Low Noise Silicon Bipolar RF Transistor

文件：614.9 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：142.49 Kbytes Page：7 Pages

The RF Line NPN Silicon High-Frequency Transistor

文件：59.23 Kbytes Page：4 Pages

三极管

RF Tranasitor

高线性度RF 管基

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broad band amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition t

RF TRANSISTORS NPN SILICON

Designedprimarily for use in high–gain, low–noise, small–signal UHF and microwaveamplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

NPN 6 GHz wideband transistor

RF Manual 16th edition

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Designe

NPN Silicon RF Transistor

For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz.

Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in RF amplifiers .mixers and oscillators with signal frequencies up to 1 GH

RF Manual 16th edition

NPN Silicon RF Transistor

文件：142.49 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：614.9 Kbytes Page：6 Pages

NPN 6 GHz wideband transistor

文件：101.98 Kbytes Page：12 Pages

NPN 6 GHz wideband transistor

文件：101.98 Kbytes Page：12 Pages

NPN 6 GHz wideband transistor

文件：95.72 Kbytes Page：13 Pages

NPN 6 GHz wideband transistor

文件：95.72 Kbytes Page：13 Pages

The RF Line NPN Silicon High-Frequency Transistor

文件：59.23 Kbytes Page：4 Pages

The RF Line NPN Silicon High-Frequency Transistor

文件：59.23 Kbytes Page：4 Pages

The RF Line NPN Silicon High-Frequency Transistor

文件：59.23 Kbytes Page：4 Pages

The RF Line NPN Silicon High-Frequency Transistor

文件：59.23 Kbytes Page：4 Pages

Low Noise Silicon Bipolar RF Transistor

文件：675.05 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：托盘 描述：RF TRANS NPN 12V 5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 12V 5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low Noise Silicon Bipolar RF Transistor

文件：675.05 Kbytes Page：6 Pages

NPN 5 GHz wideband transistor

文件：77.26 Kbytes Page：12 Pages

NPN 5 GHz wideband transistor

文件：77.26 Kbytes Page：12 Pages