NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz.

Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in RF amplifiers .mixers and oscillators with signal frequencies up to 1 GH

RF Manual 16th edition

Low Noise Silicon Bipolar RF Transistor

文件：675.05 Kbytes Page：6 Pages

Silicon NPN RF Transistor

高线性度RF 管基

NPN 5 GHz宽频带晶体管

封装/外壳：SC-70，SOT-323 包装：托盘 描述：RF TRANS NPN 12V 5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 12V 5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low Noise Silicon Bipolar RF Transistor

文件：675.05 Kbytes Page：6 Pages

NPN 5 GHz wideband transistor

文件：77.26 Kbytes Page：12 Pages

NPN 5 GHz wideband transistor

文件：77.26 Kbytes Page：12 Pages