NPN 5 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noi

Silicon NPN Planar RF Transistor

Features ● High power gain ● Low noise figure ● High transition frequency Applications     RF amplifier up to GHz range specially for wide band antenna amplifier.

SMALL SIGNAL NPN RF TRANSISTOR

文件：484.52 Kbytes Page：4 Pages

SMALL SIGNAL NPN RF TRANSISTOR

Silicon NPN Planar RF Transistor

NPN 5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. FEATURES • High power gain • Low noise figure • Low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

NPN WIDEBAND TRANSISTOR

Features • RF Wideband Amplifier/Oscillator • 5GHz Transition Frequency • Low Intermodulation Distortion • High Power Gain • Low Noise

NPN 5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. FEATURES • High power gain • Low noise figure • Low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

RF Manual 16th edition

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.3 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain ︱ S21e︱ 2 = 11.5 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • De

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

RF TRANSISTORS NPN SILICON

Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 suffix indicates tape and reel packaging of 3,000 units per reel.

RF & MICROWAVE TRANSISTORS

DESCRIPTION The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. KEY FEATURES ■ High FTau-4.5GHz ■ Low noise-3.0dB@500MHz ■ Low cost SOT23 package AP PLICATIONS/BENEFITS ■ LNA, Oscillator, Pre-Driver

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR92AT uses the same crystal as the SOT23 version: BFR92A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS RF amplifiers, mixer

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

NPN 5 GHz wideband transistor

RF Manual 16th edition

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 (PNP) • CECC-type available: CECC 50002/249

Silicon NPN Planar RF Transistor

Features ● High power gain ● Low noise figure ● High transition frequency Applications     RF amplifier up to GHz range specially for wide band antenna amplifier.

NPN Silicon RF Transistor

NPN Silicon RF Transistor NPN Silicon RF Transistor Preliminary data • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92T (PNP)

NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W (PNP)

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

NPN Silicon Epitaxial Planar Transistor

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

SMALL SIGNAL NPN RF TRANSISTOR

文件：484.52 Kbytes Page：4 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

NPN 5 GHz wideband transistor

文件：102.06 Kbytes Page：12 Pages

NPN 5 GHz wideband transistor

文件：102.06 Kbytes Page：12 Pages

Silicon NPN Planar RF Transistor

文件：86.55 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：86.55 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 15V 5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 15V 5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 5 GHz wideband transistor

文件：80.05 Kbytes Page：12 Pages

NPN 5 GHz wideband transistor

文件：80.05 Kbytes Page：12 Pages

Silicon NPN Planar RF Transistor

文件：261.23 Kbytes Page：10 Pages

Low Noise Silicon Bipolar RF Transistor

文件：602.03 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：142.59 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：142.59 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：602.03 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：140.2 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：140.2 Kbytes Page：7 Pages