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BFR19晶体管资料
BFR19别名：BFR19三极管、BFR19晶体管、BFR19晶体三极管
BFR19生产厂家：德国电子元件股份公司
BFR19制作材料：Si-NPN
BFR19性质：低频或音频放大 （LF）_TR
BFR19封装形式：直插封装
BFR19极限工作电压：75V
BFR19最大电流允许值：1A
BFR19最大工作频率：100MHZ
BFR19引脚数：3
BFR19最大耗散功率：0.8W
BFR19放大倍数：
BFR19图片代号：C-40
BFR19vtest：75
BFR19htest：100000000
- BFR19atest：1
BFR19wtest：0.8
BFR19代换 BFR19用什么型号代替：BC140,BC141,BCY55,BSX45,BSY83,BSY84,2N1990,2N2102,2N2405,3DG182B,
BFR19价格
参考价格：￥0.7570
型号：BFR193E6327 品牌：INF 备注：这里有BFR19多少钱，2025年最近7天走势，今日出价，今日竞价，BFR19批发/采购报价，BFR19行情走势销售排行榜，BFR19报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BFR19 | Medium Power Amplifiers and Switches 文件：146.76 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT= 8GHz F= 1.3dB at 900MHz | SIEMENS 西门子 | | ||
NPN Silicon RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | ||
NPN Bipolar RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | ||
NPN Bipolar RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description | Infineon 英飞凌 | | ||
Silicon NPN Planar RF Transistor Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low-noise, high-gain applications such as power amplifiers up to 2GHz and f | VishayVishay Siliconix 威世威世科技公司 | | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor Preliminary data • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz | Infineon 英飞凌 | | ||
Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broad band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. Feature | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low-noise, high-gain applications such as power amplifiers up to 2GHz and f | VishayVishay Siliconix 威世威世科技公司 | | ||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz | SIEMENS 西门子 | | ||
NPN Silicon RF Transistor Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | ||
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 (NPN) | SIEMENS 西门子 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：632.42 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：78.29 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：78.29 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：632.42 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：542.07 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
高线性度RF 管基 | Infineon 英飞凌 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：542.07 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8GHZ TSFP-3 分立半导体产品 晶体管 - 双极（BJT）- 射频 | Infineon 英飞凌 | | ||
高线性度RF 管基 | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：51.84 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：501.19 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：51.84 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：501.19 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：501.19 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
Silicon NPN Planar RF Transistor | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：265.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：258.26 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：265.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：258.26 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：265.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：258.26 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
NPN Silicon RF Transistor 文件：77.9 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：660.91 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
isc Silicon NPN RF Transistor 文件：268.46 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
NPN Silicon RF Transistor 文件：77.9 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：660.91 Kbytes Page：6 Pages | Infineon 英飞凌 | |
BFR19产品属性
- 类型
描述
- 型号
BFR19
- 制造商
Infineon Technologies AG
- 功能描述
Trans GP BJT NPN 12V 0.08A 3-Pin TSFP T/R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
7128 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
25+ |
SOT-23 |
20300 |
INFINEON/英飞凌原装特价BFR193即刻询购立享优惠#长期有货 |
|||
INFINEON |
23+ |
SOT323-3 |
2300 |
原装正品，实单请联系 |
|||
INFINEON/英飞凌 |
2025+ |
SOT-323 |
5000 |
原装进口价格优 请找坤融电子! |
|||
INFINEON |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
INFINEON/英飞凌 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
INFINEON/英飞凌 |
2019+ |
SOT-23 |
78550 |
原厂渠道 可含税出货 |
|||
INFINEON/英飞凌 |
22+ |
SOT23-3 |
8000 |
原装正品现货假一罚十 |
BFR19芯片相关品牌
BFR19规格书下载地址
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BFR19数据表相关新闻
BFR92P E6327
进口代理
2024-5-17BFR181WH6327XTSA1
BFR181WH6327XTSA1
2024-1-3BFU520A
BFU520A
2023-5-19BFQ19SH6327
公司是一家大型电子元器件代理商、分销商。与国内外超过20多家大品牌生产商和代理商建立了长期合作关系。专门经营各类存储、单片机、逻辑、运放等IC芯片，MOS管，二三极管。主要经营品牌有ADI、TI、ON、NXP、ST、NS、ATMEL
2021-11-30BFR181WH6327 晶体管
BFR181WH6327 晶体管
2021-3-23BFU730F115
双极功率RF双极晶体管，RF双极小信号RF双极晶体管，双极RF双极晶体管，Si双极NPN 30 RF双极晶体管，双极NPN AEC-Q101 RF双极晶体管，单SMD / SMT NPN RF双极晶体管
2020-8-3
DdatasheetPDF页码索引
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