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BFR193晶体管资料
BFR193别名：BFR193三极管、BFR193晶体管、BFR193晶体三极管
BFR193生产厂家：
BFR193制作材料：Si-NPN
BFR193性质：表面帖装型 （SMD）_超高频/特高频 （UHF）_宽频带
BFR193封装形式：贴片封装
BFR193极限工作电压：20V
BFR193最大电流允许值：0.08A
BFR193最大工作频率：8GHZ
BFR193引脚数：3
BFR193最大耗散功率：
BFR193放大倍数：
BFR193图片代号：H-15
BFR193vtest：20
BFR193htest：8000000000
- BFR193atest：0.08
BFR193wtest：0
BFR193代换 BFR193用什么型号代替：2SC3356,2SC3445,
BFR193价格
参考价格：￥0.7570
型号：BFR193E6327 品牌：INF 备注：这里有BFR193多少钱，2025年最近7天走势，今日出价，今日竞价，BFR193批发/采购报价，BFR193行情走势销售排行榜，BFR193报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BFR193 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT= 8GHz F= 1.3dB at 900MHz | SIEMENS 西门子 |   | |
BFR193 | NPN Silicon RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | |
BFR193 | NPN Bipolar RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | |
BFR193 | Low Noise Silicon Bipolar RF Transistor 文件：632.42 Kbytes Page：6 Pages | Infineon 英飞凌 | | |
BFR193 | NPN Silicon RF Transistor 文件：78.29 Kbytes Page：7 Pages | Infineon 英飞凌 | | |
BFR193 | 高线性度RF 管基 | Infineon 英飞凌 | | |
NPN Bipolar RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor Preliminary data • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz | Infineon 英飞凌 | | ||
Silicon NPN Planar RF Transistor Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low-noise, high-gain applications such as power amplifiers up to 2GHz and f | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broad band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. Feature | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low-noise, high-gain applications such as power amplifiers up to 2GHz and f | VishayVishay Siliconix 威世威世科技公司 | | ||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz | SIEMENS 西门子 | | ||
NPN Silicon RF Transistor Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：78.29 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：632.42 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：542.07 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
Low Noise Silicon Bipolar RF Transistor 文件：542.07 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8GHZ TSFP-3 分立半导体产品 晶体管 - 双极（BJT）- 射频 | Infineon 英飞凌 | | ||
高线性度RF 管基 | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：501.19 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：51.84 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
NPN Silicon RF Transistor 文件：51.84 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：501.19 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：501.19 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
Silicon NPN Planar RF Transistor | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：258.26 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：265.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：265.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：258.26 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：258.26 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor 文件：265.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
NPN Silicon RF Transistor 文件：77.9 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：660.91 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
isc Silicon NPN RF Transistor 文件：268.46 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
NPN Silicon RF Transistor 文件：77.9 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
For low noise, high-gain amplifiers up to 2 GHz 文件：660.91 Kbytes Page：6 Pages | Infineon 英飞凌 | | ||
RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS 文件：418.49 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
Budget Pack for Metro 328 - with Assembled Metro ATmega328P 文件：140.48 Kbytes Page：3 Pages | Adafruit | | ||
RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS 文件：115.71 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Side Actuated, Through Hole DIP Switches 文件：976.39 Kbytes Page：2 Pages | CTS 西迪斯 | | ||
MINIATURE FUSES 文件：63.43 Kbytes Page：2 Pages | Littelfuse 力特 | |
BFR193产品属性
- 类型
描述
- 型号
BFR193
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
NPN Silicon RF Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
SOT-23 |
8307 |
新进库存/原装 |
|||
INFINEON |
1922+ |
SOT23 |
90000 |
原装进口现货库存专业工厂研究所配单供货 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
INFINEON/英飞凌 |
25+ |
SOT-23 |
20300 |
INFINEON/英飞凌原装特价BFR193即刻询购立享优惠#长期有货 |
|||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
INF |
23+ |
65480 |
|||||
INFINEON/英飞凌 |
22+ |
SOT23-3 |
8000 |
原装正品现货假一罚十 |
|||
Infineon |
SOT-23 |
37 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
INFINEON/英飞凌 |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
INFINEON/英飞凌 |
2025+ |
SOT-323 |
5000 |
原装进口价格优 请找坤融电子! |
BFR193规格书下载地址
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BFR193数据表相关新闻
BFR92P E6327
进口代理
2024-5-17BFR181WH6327XTSA1
BFR181WH6327XTSA1
2024-1-3BFU520A
BFU520A
2023-5-19BFQ19SH6327
公司是一家大型电子元器件代理商、分销商。与国内外超过20多家大品牌生产商和代理商建立了长期合作关系。专门经营各类存储、单片机、逻辑、运放等IC芯片，MOS管，二三极管。主要经营品牌有ADI、TI、ON、NXP、ST、NS、ATMEL
2021-11-30BFR181WH6327 晶体管
BFR181WH6327 晶体管
2021-3-23BFU730F115
双极功率RF双极晶体管，RF双极小信号RF双极晶体管，双极RF双极晶体管，Si双极NPN 30 RF双极晶体管，双极NPN AEC-Q101 RF双极晶体管，单SMD / SMT NPN RF双极晶体管
2020-8-3
DdatasheetPDF页码索引
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