BFR193晶体管资料

  • BFR193别名:BFR193三极管、BFR193晶体管、BFR193晶体三极管

  • BFR193生产厂家

  • BFR193制作材料:Si-NPN

  • BFR193性质:表面帖装型 (SMD)_超高频/特高频 (UHF)_宽频带

  • BFR193封装形式:贴片封装

  • BFR193极限工作电压:20V

  • BFR193最大电流允许值:0.08A

  • BFR193最大工作频率:8GHZ

  • BFR193引脚数:3

  • BFR193最大耗散功率

  • BFR193放大倍数

  • BFR193图片代号:H-15

  • BFR193vtest:20

  • BFR193htest:8000000000

  • BFR193atest:0.08

  • BFR193wtest:0

  • BFR193代换 BFR193用什么型号代替:2SC3356,2SC3445,

BFR193价格

参考价格:¥0.7570

型号:BFR193E6327 品牌:INF 备注:这里有BFR193多少钱,2026年最近7天走势,今日出价,今日竞价,BFR193批发/采购报价,BFR193行情走势销售排行榜,BFR193报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BFR193

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT= 8GHz F= 1.3dB at 900MHz

SIEMENS

西门子

BFR193

NPN Silicon RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

BFR193

NPN Bipolar RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

BFR193

Low Noise Silicon Bipolar RF Transistor

文件:632.42 Kbytes Page:6 Pages

INFINEON

英飞凌

BFR193

NPN Silicon RF Transistor

文件:78.29 Kbytes Page:7 Pages

INFINEON

英飞凌

BFR193

高线性度RF 管基

INFINEON

英飞凌

NPN Bipolar RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free product • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

INFINEON

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low-noise, high-gain applications such as power amplifiers up to 2GHz and f

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broad band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. Feature

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low-noise, high-gain applications such as power amplifiers up to 2GHz and f

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

SIEMENS

西门子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:78.29 Kbytes Page:7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:632.42 Kbytes Page:6 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:542.07 Kbytes Page:6 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:542.07 Kbytes Page:6 Pages

INFINEON

英飞凌

封装/外壳:SOT-723 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:RF TRANS NPN 12V 8GHZ TSFP-3 分立半导体产品 晶体管 - 双极(BJT)- 射频

INFINEON

英飞凌

For low noise, high-gain amplifiers up to 2 GHz

文件:501.19 Kbytes Page:6 Pages

INFINEON

英飞凌

高线性度RF 管基

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:51.84 Kbytes Page:6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:51.84 Kbytes Page:6 Pages

INFINEON

英飞凌

For low noise, high-gain amplifiers up to 2 GHz

文件:501.19 Kbytes Page:6 Pages

INFINEON

英飞凌

For low noise, high-gain amplifiers up to 2 GHz

文件:501.19 Kbytes Page:6 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:258.26 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:265.88 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:265.88 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:258.26 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:258.26 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:265.88 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor

文件:77.9 Kbytes Page:7 Pages

INFINEON

英飞凌

For low noise, high-gain amplifiers up to 2 GHz

文件:660.91 Kbytes Page:6 Pages

INFINEON

英飞凌

isc Silicon NPN RF Transistor

文件:268.46 Kbytes Page:2 Pages

ISC

无锡固电

NPN Silicon RF Transistor

文件:77.9 Kbytes Page:7 Pages

INFINEON

英飞凌

For low noise, high-gain amplifiers up to 2 GHz

文件:660.91 Kbytes Page:6 Pages

INFINEON

英飞凌

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:418.49 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

Budget Pack for Metro 328 - with Assembled Metro ATmega328P

文件:140.48 Kbytes Page:3 Pages

ADAFRUIT

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:115.71 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Side Actuated, Through Hole DIP Switches

文件:976.39 Kbytes Page:2 Pages

CTS

西迪斯

MINIATURE FUSES

文件:63.43 Kbytes Page:2 Pages

LITTELFUSE

力特

BFR193产品属性

  • 类型

    描述

  • 型号

    BFR193

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    NPN Silicon RF Transistor

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
标准封装
7128
原厂渠道供应,大量现货,原型号开票。
INFINEON/英飞凌
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
INFINEON/英飞凌
24+
SOT23
159757
明嘉莱只做原装正品现货
Infineon(英飞凌)
25+
SOT-23-3
21000
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
22+
SOT23-3
8000
原装正品现货假一罚十
INFINEON
23+
SOT323-3
2300
原装正品,实单请联系
INFINEON/英飞凌
2019+
SOT-23
78550
原厂渠道 可含税出货
INFINEON
24+
N/A
8000
全新原装正品,现货销售
INFINEON只做原装
23+
SOT-23
38230
正规渠道,只有原装!
INFINEON
24+
N/A
10000
只做原装,实单最低价支持

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