NPN Silicon Germanium RF Transistor

Product Brief The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45

NPN Transistors

■ Features ● High gain ultra low noise RF transistor ● High maximum stable gain ● Gold metallization for extra high reliability ● 150 GHz fT-Silicon Germanium technology ● Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz

低噪声RF 管基

NPN Silicon Germanium RF Transistor

文件：599.41 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.3682 Mbytes Page：28 Pages

NPN Silicon Germanium RF Transist

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

NPN Silicon Germanium RF Transist

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 45 mA.

NPN Silicon Germanium RF Transistor

文件：599.41 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.3682 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.55917 Mbytes Page：28 Pages

Robust High Performance Low Noise Bipolar RF Transistor

文件：1.93251 Mbytes Page：29 Pages

低噪声RF 管基

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.55917 Mbytes Page：28 Pages

Robust High Performance Low Noise Bipolar RF Transistor

文件：1.93251 Mbytes Page：29 Pages

低噪声RF 管基

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.51591 Mbytes Page：28 Pages

NPN Silicon Germanium RF Transistor

文件：147.89 Kbytes Page：10 Pages

NPN Silicon Germanium RF Transistor

文件：147.89 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.51591 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.641 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.641 Mbytes Page：28 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 47GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 42GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

740/741 High Displacement Threaded Diaphragm Seal

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