NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

NPN Silicon Germanium RF Transist

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

低噪声RF 管基

BFP740F 是硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)。 • 低噪声系数 NFmin = 1 dB @ 5.5 GHz, 3 V, 6 mA\n• OIP3 = 24 dBm @ 5.5 GHz, 3 V, 15 mA\n• 薄型小尺寸无引线封装;

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.51591 Mbytes Page：28 Pages

NPN Silicon Germanium RF Transistor

文件：147.89 Kbytes Page：10 Pages

NPN Silicon Germanium RF Transist

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 45 mA.

低噪声RF 管基

BFP740FESD 是一款硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)，具有集成 ESD 保护功能 • 高端 RF 性能与稳健性的独特组合：21 dBm 最大 RF 输入功率，集成保护电路带来 2 kV ESD 稳健性 (HBM)\n• 高增益 Gms = 26 dB (2.4 GHz 时) 和 Gma = 20.5 dB (5.5 GHz 时)，3V，25 mA\n• 薄型小尺寸无引线封装;

NPN Silicon Germanium RF Transistor

文件：147.89 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.51591 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.641 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.641 Mbytes Page：28 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 47GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 42GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

Silicon epitaxial planar type

Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two MA3X721 (MA721) is contained in one package (series connection) • Forward current (Average) IF(AV) = 200 mA (per single diode) rectification is possible

Integrated Circuit Audio Power Amp, 2W

Description: TheNTE740A is an Audio Power Amplifier in a 14–Lead DIP type package designed for minimal external component requirements. Features: ● Low Distortion ● Low Quiescent Current ● 34dB Internally Fixed Gain ● High Input Impedance ● Thermal Overload Protection ● Output Short Circui

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capabil