Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 45 mA.

低噪声RF 管基

BFP740FESD 是一款硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)，具有集成 ESD 保护功能 • 高端 RF 性能与稳健性的独特组合：21 dBm 最大 RF 输入功率，集成保护电路带来 2 kV ESD 稳健性 (HBM)\n• 高增益 Gms = 26 dB (2.4 GHz 时) 和 Gma = 20.5 dB (5.5 GHz 时)，3V，25 mA\n• 薄型小尺寸无引线封装;

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.641 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.641 Mbytes Page：28 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 47GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

Silicon epitaxial planar type

Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two MA3X721 (MA721) is contained in one package (series connection) • Forward current (Average) IF(AV) = 200 mA (per single diode) rectification is possible

Integrated Circuit Audio Power Amp, 2W

Description: TheNTE740A is an Audio Power Amplifier in a 14–Lead DIP type package designed for minimal external component requirements. Features: ● Low Distortion ● Low Quiescent Current ● 34dB Internally Fixed Gain ● High Input Impedance ● Thermal Overload Protection ● Output Short Circui

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capabil