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BFG54晶体管资料
BFG54别名:BFG54三极管、BFG54晶体管、BFG54晶体三极管
BFG54生产厂家:英国Mullard有限公司
BFG54制作材料:Si-PNP
BFG54性质:超高频/特高频 (UHF)_微波 (MW)
BFG54封装形式:贴片封装
BFG54极限工作电压:18V
BFG54最大电流允许值:0.15A
BFG54最大工作频率:4.5GHZ
BFG54引脚数:4
BFG54最大耗散功率:1W
BFG54放大倍数:
BFG54图片代号:G-129
BFG54vtest:18
BFG54htest:4500000000
- BFG54atest:0.15
BFG54wtest:1
BFG54代换 BFG54用什么型号代替:
BFG54价格
参考价格:¥0.4500
型号:BFG540 品牌:NXP 备注:这里有BFG54多少钱,2025年最近7天走势,今日出价,今日竞价,BFG54批发/采购报价,BFG54行情走势销售排行榜,BFG54报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
isc Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h | ISC 无锡固电 | |||
NPN 9GHz Wideband Transistor ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability. | KEXIN 科信电子 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibr | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISC 无锡固电 | |||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
NPN 9 GHz wideband transistor 文件:119.42 Kbytes Page:12 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:119.42 Kbytes Page:12 Pages | JMNIC 锦美电子 |
BFG54产品属性
- 类型
描述
- 型号
BFG54
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
NPN 9 GHz wideband transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
46048 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
2016+ |
SOT-143 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PHI |
23+ |
SOT143 |
20000 |
全新原装假一赔十 |
|||
恩XP |
24+ |
NA |
6000 |
全新原装正品现货 假一赔佰 |
|||
17PB |
SOT143 |
1 |
普通 |
||||
恩XP |
14+ |
SOT343 |
10988 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
25+ |
SOT-343 |
32000 |
NXP/恩智浦全新特价BFG540W/XR即刻询购立享优惠#长期有货 |
|||
恩XP |
24+/25+ |
SOT23 |
3000 |
原装正品现货库存价优 |
|||
24+ |
SOT-143 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
BFG54规格书下载地址
BFG54参数引脚图相关
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- BFG93(A)XR
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- BFG67
- BFG65(T)
- BFG65
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- BFG590W
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- BFG520XR
- BFG520X
- BFG520W
- BFG520
- BFG51
- BFG505XR
- BFG505X
- BFG505W
- BFG505
- BFG480W
- BFG480
- BFG425W
- BFG424W
- BFG424F
- BFG410W
- BFG410
- BFG403W
- BFG35
- BFG34
- BFG33X
- BFG33A
- BFG33
- BFG325W
- BFG325
- BFG32
- BFG310W
- BFG310
- BFG31
- BFG25X
- BFG25(A,X)
- BFG235
- BFG23
- BFG19S(A)
- BFG19S
- BFG198
BFG54数据表相关新闻
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BFHK-1982+
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2019-11-30
DdatasheetPDF页码索引
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