BFG54晶体管资料

  • BFG54别名:BFG54三极管、BFG54晶体管、BFG54晶体三极管

  • BFG54生产厂家:英国Mullard有限公司

  • BFG54制作材料:Si-PNP

  • BFG54性质:超高频/特高频 (UHF)_微波 (MW)

  • BFG54封装形式:贴片封装

  • BFG54极限工作电压:18V

  • BFG54最大电流允许值:0.15A

  • BFG54最大工作频率:4.5GHZ

  • BFG54引脚数:4

  • BFG54最大耗散功率:1W

  • BFG54放大倍数

  • BFG54图片代号:G-129

  • BFG54vtest:18

  • BFG54htest:4500000000

  • BFG54atest:0.15

  • BFG54wtest:1

  • BFG54代换 BFG54用什么型号代替

BFG54价格

参考价格:¥0.4500

型号:BFG540 品牌:NXP 备注:这里有BFG54多少钱,2025年最近7天走势,今日出价,今日竞价,BFG54批发/采购报价,BFG54行情走势销售排行榜,BFG54报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

RF Manual 16th edition

ETC

知名厂家

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h

ISC

无锡固电

NPN 9GHz Wideband Transistor

■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.

KEXIN

科信电子

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibr

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

isc Silicon NPN RF Transistor

文件:245.37 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

NPN 9 GHz wideband transistor

文件:138.25 Kbytes Page:16 Pages

JMNIC

锦美电子

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

isc Silicon NPN RF Transistor

文件:245.37 Kbytes Page:2 Pages

ISC

无锡固电

NPN 9 GHz wideband transistor

文件:138.25 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:136.6 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:136.6 Kbytes Page:16 Pages

JMNIC

锦美电子

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

NPN 9 GHz wideband transistor

文件:119.42 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:119.42 Kbytes Page:12 Pages

JMNIC

锦美电子

BFG54产品属性

  • 类型

    描述

  • 型号

    BFG54

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    NPN 9 GHz wideband transistor

更新时间:2025-8-14 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
标准封装
46048
全新原装正品/价格优惠/质量保障
恩XP
2016+
SOT-143
3000
只做原装,假一罚十,公司可开17%增值税发票!
PHI
23+
SOT143
20000
全新原装假一赔十
恩XP
24+
NA
6000
全新原装正品现货 假一赔佰
17PB
SOT143
1
普通
恩XP
14+
SOT343
10988
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
23+
SOT-143
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
恩XP
25+
SOT-343
32000
NXP/恩智浦全新特价BFG540W/XR即刻询购立享优惠#长期有货
恩XP
24+/25+
SOT23
3000
原装正品现货库存价优
24+
SOT-143
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

BFG54数据表相关新闻