BFG54晶体管资料

  • BFG54别名:BFG54三极管、BFG54晶体管、BFG54晶体三极管

  • BFG54生产厂家:英国Mullard有限公司

  • BFG54制作材料:Si-PNP

  • BFG54性质:超高频/特高频 (UHF)_微波 (MW)

  • BFG54封装形式:贴片封装

  • BFG54极限工作电压:18V

  • BFG54最大电流允许值:0.15A

  • BFG54最大工作频率:4.5GHZ

  • BFG54引脚数:4

  • BFG54最大耗散功率:1W

  • BFG54放大倍数

  • BFG54图片代号:G-129

  • BFG54vtest:18

  • BFG54htest:4500000000

  • BFG54atest:0.15

  • BFG54wtest:1

  • BFG54代换 BFG54用什么型号代替

BFG54价格

参考价格:¥0.4500

型号:BFG540 品牌:NXP 备注:这里有BFG54多少钱,2025年最近7天走势,今日出价,今日竞价,BFG54批发/采购报价,BFG54行情走势销售排行榜,BFG54报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

RF Manual 16th edition

ETC

知名厂家

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h

ISC

无锡固电

NPN 9GHz Wideband Transistor

■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.

KEXIN

科信电子

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibr

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN高频低噪声晶体管

ETC

知名厂家

isc Silicon NPN RF Transistor

文件:245.37 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

RF放大器

Slkor

萨科微

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

高频三极管

ETC

知名厂家

NPN 9 GHz wideband transistor

文件:138.25 Kbytes Page:16 Pages

JMNIC

锦美电子

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

isc Silicon NPN RF Transistor

文件:245.37 Kbytes Page:2 Pages

ISC

无锡固电

NPN 9 GHz wideband transistor

文件:138.25 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:136.6 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:136.6 Kbytes Page:16 Pages

JMNIC

锦美电子

BFG54产品属性

  • 类型

    描述

  • 型号

    BFG54

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    NPN 9 GHz wideband transistor

更新时间:2025-12-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
标准封装
46048
全新原装正品/价格优惠/质量保障
恩XP
23+
SOT-143
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
恩XP
25+
SOT-343
32000
NXP/恩智浦全新特价BFG540W/XR即刻询购立享优惠#长期有货
恩XP
23+
标准封装
6000
正规渠道,只有原装!
恩XP
24+
SOT-143B
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
PHI
23+
SOT-143
20441
原厂原装正品
Slkor/萨科微
24+
SOT-143B
50000
Slkor/萨科微一级代理,价格优势
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
恩XP
25+
SOT-143
6500
十七年专营原装现货一手货源,样品免费送
恩XP
22+
SOT143
36500
只做进口原装正品假一赔十!

BFG54数据表相关新闻