BFG54晶体管资料
BFG54别名:BFG54三极管、BFG54晶体管、BFG54晶体三极管
BFG54生产厂家:英国Mullard有限公司
BFG54制作材料:Si-PNP
BFG54性质:超高频/特高频 (UHF)_微波 (MW)
BFG54封装形式:贴片封装
BFG54极限工作电压:18V
BFG54最大电流允许值:0.15A
BFG54最大工作频率:4.5GHZ
BFG54引脚数:4
BFG54最大耗散功率:1W
BFG54放大倍数:
BFG54图片代号:G-129
BFG54vtest:18
BFG54htest:4500000000
- BFG54atest:0.15
BFG54wtest:1
BFG54代换 BFG54用什么型号代替:
BFG54价格
参考价格:¥0.4500
型号:BFG540 品牌:NXP 备注:这里有BFG54多少钱,2026年最近7天走势,今日出价,今日竞价,BFG54批发/采购报价,BFG54行情走势销售排行榜,BFG54报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:-MG;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:-MG;NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
丝印代码:-MG;RF Manual 16th edition | ETC 知名厂家 | ETC | ||
isc Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h | ISC 无锡固电 | |||
NPN 9GHz Wideband Transistor ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability. | KEXIN 科信电子 | |||
丝印代码:N37;NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:-MM;NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
丝印代码:tMM;NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
丝印代码:tMM;RF Manual 16th edition | ETC 知名厂家 | ETC | ||
丝印代码:-MM;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:tMM;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMM;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMR;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:-MR;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMR;NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
丝印代码:tMR;RF Manual 16th edition | ETC 知名厂家 | ETC | ||
丝印代码:-MR;NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
丝印代码:-MM;NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
丝印代码:tMM;NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
丝印代码:tMM;RF Manual 16th edition | ETC 知名厂家 | ETC | ||
丝印代码:-MM;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:tMM;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMM;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMR;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMR;NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | PHILIPS 飞利浦 | |||
丝印代码:tMR;RF Manual 16th edition | ETC 知名厂家 | ETC | ||
丝印代码:-MR;NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
丝印代码:tMR;NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
丝印代码:N9;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | PHILIPS 飞利浦 | |||
丝印代码:N9;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:N9;RF Manual 16th edition | ETC 知名厂家 | ETC | ||
丝印代码:N7;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:N7;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | PHILIPS 飞利浦 | |||
丝印代码:N8;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | PHILIPS 飞利浦 | |||
丝印代码:N8;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:N7;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | PHILIPS 飞利浦 | |||
丝印代码:N7;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
丝印代码:N8;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | PHILIPS 飞利浦 | |||
丝印代码:N8;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
丝印代码:N43;NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:N49;NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibr | PHILIPS 飞利浦 | |||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
NPN高频低噪声晶体管 | RM TECHNOLOGY | |||
RF放大器 | SLKOR 萨科微 | |||
封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
高频三极管 | MXTronics | |||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISC 无锡固电 | |||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNIC 锦美电子 |
BFG54产品属性
- 类型
描述
- VCEO(V):
15
- ICM(mA):
120
- PT(W):
0.4
- 2(dB):
15
- NF(dB):
1.9
- GUM(dB):
18
- @Vce(V):
8
- @Ic(mA):
40
- @fT(GHz):
0.9
- Package:
SOT143B
- 兼容型号:
ON4832;/X
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
23+ |
NA |
13824 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
|||
恩XP |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
18+ |
SOT-143 |
85600 |
保证进口原装可开17%增值税发票 |
|||
恩XP |
23+ |
SOT-143 |
3000 |
原装正品假一罚百!可开增票! |
|||
PHI |
05+ |
原厂原装 |
50051 |
只做全新原装真实现货供应 |
|||
恩XP |
22+ |
SOT143 |
8000 |
原装正品支持实单 |
|||
恩XP |
23+ |
N/A |
6000 |
公司只做原装,可来电咨询 |
|||
恩XP |
2025+ |
SOT143 |
5000 |
原装进口价格优 请找坤融电子! |
|||
恩XP |
2019+ |
SOT143 |
36000 |
原盒原包装 可BOM配套 |
|||
恩XP |
2023+ |
SOT23 |
50000 |
原装现货 |
BFG54芯片相关品牌
BFG54规格书下载地址
BFG54参数引脚图相关
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- c901
- C80
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- BFG34
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- BFG33A
- BFG33
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- BFG325
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- BFG310
- BFG31
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BFG54数据表相关新闻
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BFHK-1982+
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进口代理
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2019-11-30
DdatasheetPDF页码索引
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