丝印代码：N9；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

丝印代码：N9；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

丝印代码：N9；RF Manual 16th edition

NPN 9 GHz宽频带晶体管

丝印代码：N7；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

丝印代码：N7；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

丝印代码：N8；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

丝印代码：N8；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

丝印代码：N7；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

丝印代码：N7；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

丝印代码：N8；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

丝印代码：N8；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

RF Manual 16th edition

RF Manual 16th edition

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 15V 9GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

高频三极管

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 15V 9GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 9 GHz wideband transistor

文件：136.6 Kbytes Page：16 Pages

NPN 9 GHz wideband transistor

文件：136.6 Kbytes Page：16 Pages

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca