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BFG505晶体管资料

  • BFG505别名:BFG505三极管、BFG505晶体管、BFG505晶体三极管

  • BFG505生产厂家

  • BFG505制作材料:Si-NPN

  • BFG505性质:表面帖装型 (SMD)_超高频/特高频 (UHF)

  • BFG505封装形式:贴片封装

  • BFG505极限工作电压:20V

  • BFG505最大电流允许值:0.018A

  • BFG505最大工作频率:9GHZ

  • BFG505引脚数:3

  • BFG505最大耗散功率

  • BFG505放大倍数

  • BFG505图片代号:H-17

  • BFG505vtest:20

  • BFG505htest:9000000000

  • BFG505atest:0.018

  • BFG505wtest:0

  • BFG505代换 BFG505用什么型号代替

BFG505价格

参考价格:¥0.5788

型号:BFG505,215 品牌:NXP 备注:这里有BFG505多少钱,2026年最近7天走势,今日出价,今日竞价,BFG505批发/采购报价,BFG505行情走势销售排行榜,BFG505报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BFG505

丝印代码:-ME;NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

BFG505

丝印代码:-ME;RF Manual 16th edition

ETC

知名厂家

BFG505

丝印代码:-ME;NPN 9 GHz wideband transistors

ETC

知名厂家

BFG505

NPN 9 GHz宽频带晶体管

ETC

知名厂家

BFG505

NPN 9 GHz wideband transistors

文件:136.27 Kbytes Page:16 Pages

JMNIC

锦美电子

丝印代码:tMK;NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

丝印代码:tMK;RF Manual 16th edition

ETC

知名厂家

丝印代码:-MK;NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

丝印代码:-MK;NPN 9 GHz wideband transistors

ETC

知名厂家

丝印代码:-MK;NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

丝印代码:-MK;NPN 9 GHz wideband transistors

ETC

知名厂家

丝印代码:tMK;NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

丝印代码:tMK;RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

PHILIPS

飞利浦

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

高频三极管

MXTronics

丝印代码:-ME;NPN 9 GHz wideband transistors

文件:136.27 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistors

文件:136.27 Kbytes Page:16 Pages

JMNIC

锦美电子

高频三极管

MXTronics

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

MOSPEC

统懋

N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

NEC

瑞萨

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件:735.29 Kbytes Page:12 Pages

NSC

国半

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件:735.29 Kbytes Page:12 Pages

NSC

国半

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件:735.29 Kbytes Page:12 Pages

NSC

国半

BFG505产品属性

  • 类型

    描述

  • VCEO(V):

    15

  • ICM(mA):

    18

  • PT(W):

    0.15

  • 2(dB):

    17

  • NF(dB):

    1.6

  • GUM(dB):

    20

  • @Vce(V):

    6

  • @Ic(mA):

    5

  • @fT(GHz):

    0.9

  • Package:

    SOT143B

  • 兼容型号:

    BFG505;/X

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
25+
原装
32000
PHILIPS/飞利浦全新特价BFG505/X即刻询购立享优惠#长期有货
PHI
24+/25+
1748
原装正品现货库存价优
PHI
24+
SOT-143B
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
恩XP
24+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
恩XP
23+
9865
原装正品,假一赔十
恩XP
23+
NA
18281
专做原装正品,假一罚百!
PHI
19+
SOT-143
20000
原装现货假一罚十
PHI
2450+
SOT143
8850
只做原装正品假一赔十为客户做到零风险!!
PHI
25+23+
Sot-143
33755
绝对原装正品全新进口深圳现货
PHI
2023+
SMD
6000
安罗世纪电子只做原装正品货

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