BFG505晶体管资料

  • BFG505别名:BFG505三极管、BFG505晶体管、BFG505晶体三极管

  • BFG505生产厂家

  • BFG505制作材料:Si-NPN

  • BFG505性质:表面帖装型 (SMD)_超高频/特高频 (UHF)

  • BFG505封装形式:贴片封装

  • BFG505极限工作电压:20V

  • BFG505最大电流允许值:0.018A

  • BFG505最大工作频率:9GHZ

  • BFG505引脚数:3

  • BFG505最大耗散功率

  • BFG505放大倍数

  • BFG505图片代号:H-17

  • BFG505vtest:20

  • BFG505htest:9000000000

  • BFG505atest:.018

  • BFG505wtest:0

  • BFG505代换 BFG505用什么型号代替

BFG505价格

参考价格:¥0.5788

型号:BFG505,215 品牌:NXP 备注:这里有BFG505多少钱,2024年最近7天走势,今日出价,今日竞价,BFG505批发/采购报价,BFG505行情走势销售排行榜,BFG505报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BFG505

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG505

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG505

NPN9GHzwidebandtransistors

文件:136.27 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistors

文件:136.27 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN9GHzwidebandtransistors

文件:136.27 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

AxialLead&CartridgeFuses

文件:176.64 Kbytes Page:3 Pages

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

Pinpolarizationoptionalsoavailable

文件:619.18 Kbytes Page:1 Pages

ARIES

Aries Electronics,inc

ARIES

Nickel-CadmiumAircraftBattery

文件:123.79 Kbytes Page:1 Pages

SAFTsaftbatteries

帅福得

SAFT

LowCost,WideInput,5WSingle&DualOutputDC/DCConverters

文件:187.01 Kbytes Page:2 Pages

MPD

MPD (Memory Protection Devices)

MPD

Single&DualOutput,5WUltra-WideInputRangeDC/DCConverters

文件:175.26 Kbytes Page:2 Pages

MPD

MPD (Memory Protection Devices)

MPD

BFG505产品属性

  • 类型

    描述

  • 型号

    BFG505

  • 功能描述

    射频双极小信号晶体管 TAPE7 TNS-RFSS

  • RoHS

  • 制造商

    NXP Semiconductors

  • 配置

    Single

  • 晶体管极性

    NPN

  • 最大工作频率

    7000 MHz 集电极—发射极最大电压

  • VCEO

    15 V 发射极 - 基极电压

  • VEBO

    2 V

  • 集电极连续电流

    0.15 A

  • 功率耗散

    1000 mW 直流集电极/Base Gain hfe

  • 最大工作温度

    + 150 C

  • 封装/箱体

    SOT-223

  • 封装

    Reel

更新时间:2024-4-19 14:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILIPS
21+
SOT-143
35200
一级代理/放心采购
PHILIPS
22+
SOT-143
360000
进口原装房间现货实库实数
NXP/恩智浦
19+
4000
以质为本,只做原装正品
NXP
2020+
SOT143
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
PHILIPS/飞利浦
SOT143B
7906200
ph
22+
500000
行业低价,代理渠道
NXP(恩智浦)
21+
6000
只做原装正品,卖元器件不赚钱交个朋友
PHI
13+
SOT-143
7500
特价热销现货库存
PHILIPS
22+
SOT-143
8000
原装正品支持实单
PHL
22+
SOT-143
6000
十年配单,只做原装

BFG505芯片相关品牌

  • ALSC
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  • WEIDMULLER
  • YFWDIODE

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