NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

RF Manual 16th edition

高频三极管

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages