NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

RF Manual 16th edition

高频三极管

Pin polarization option also available

文件：619.18 Kbytes Page：1 Pages

Axial Lead & Cartridge Fuses

文件：176.64 Kbytes Page：3 Pages

Nickel-Cadmium Aircraft Battery

文件：123.79 Kbytes Page：1 Pages

Low Cost, Wide Input, 5W Single & Dual Output DC/DC Converters

文件：187.01 Kbytes Page：2 Pages

Single & Dual Output, 5W Ultra-Wide Input Range DC/DC Converters

文件：175.26 Kbytes Page：2 Pages