NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

RF Manual 16th edition

Axial Lead & Cartridge Fuses

文件：176.64 Kbytes Page：3 Pages

Pin polarization option also available

文件：619.18 Kbytes Page：1 Pages

Nickel-Cadmium Aircraft Battery

文件：123.79 Kbytes Page：1 Pages

Low Cost, Wide Input, 5W Single & Dual Output DC/DC Converters

文件：187.01 Kbytes Page：2 Pages

Single & Dual Output, 5W Ultra-Wide Input Range DC/DC Converters

文件：175.26 Kbytes Page：2 Pages