NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

NPN 9 GHz wideband transistors

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

RF Manual 16th edition

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极（BJT）- 射频

Pin polarization option also available

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Axial Lead & Cartridge Fuses

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Nickel-Cadmium Aircraft Battery

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Low Cost, Wide Input, 5W Single & Dual Output DC/DC Converters

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Single & Dual Output, 5W Ultra-Wide Input Range DC/DC Converters

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