NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

RF Manual 16th edition

NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 4.5V 22GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 4.5V 22GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 22 GHz wideband transistor

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NPN 22 GHz wideband transistor

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NPN 22 GHz wideband transistor

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Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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