丝印代码：P4；NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

丝印代码：P4；RF Manual 16th edition

NPN 22 GHz宽频带晶体管

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 4.5V 22GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 4.5V 22GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 22 GHz wideband transistor

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NPN 22 GHz wideband transistor

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NPN 22 GHz wideband transistor

文件：91.52 Kbytes Page：12 Pages

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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