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BFG3晶体管资料

  • BFG31别名:BFG31三极管、BFG31晶体管、BFG31晶体三极管

  • BFG31生产厂家:荷兰飞利浦公司

  • BFG31制作材料:Si-PNP

  • BFG31性质:超高频/特高频 (UHF)_宽频带放大 (A)

  • BFG31封装形式:贴片封装

  • BFG31极限工作电压:20V

  • BFG31最大电流允许值:0.1A

  • BFG31最大工作频率:5GHZ

  • BFG31引脚数:3

  • BFG31最大耗散功率

  • BFG31放大倍数

  • BFG31图片代号:H-99

  • BFG31vtest:20

  • BFG31htest:5000000000

  • BFG31atest:0.1

  • BFG31wtest:0

  • BFG31代换 BFG31用什么型号代替:BFG55,

BFG3价格

参考价格:¥1.8845

型号:BFG31,115 品牌:NXP 备注:这里有BFG3多少钱,2026年最近7天走势,今日出价,今日竞价,BFG3批发/采购报价,BFG3行情走势销售排行榜,BFG3报价。
型号 功能描述 生产厂家 企业 LOGO 操作

PNP 5 GHz wideband transistor

DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures

PHILIPS

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

ETC

知名厂家

NPN 14 GHz宽频带晶体管

ETC

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丝印代码:A7;NPN 14 GHz wideband transistor

ETC

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丝印代码:A7*;NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

ETC

知名厂家

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

ETC

知名厂家

丝印代码:A8;NPN 14 GHz wideband transistor

ETC

知名厂家

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

丝印代码:A8;NPN 14 GHz wideband transistor

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

PHILIPS

飞利浦

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 4 GHz wideband transistor

DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.

PHILIPS

飞利浦

PNP 5 GHz wideband transistor

文件:228.03 Kbytes Page:9 Pages

PHILIPS

飞利浦

NPN 14 GHz wideband transistor

ETC

知名厂家

NPN 14 GHz wideband transistor

ETC

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封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 6V 14GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

NPN 14 GHz wideband transistor

文件:81.37 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件:81.37 Kbytes Page:12 Pages

JMNIC

锦美电子

封装/外壳:SC-82A,SOT-343 包装:卷带(TR) 描述:RF TRANS NPN 6V 14GHZ CMPAK-4 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

NPN 14 GHz wideband transistor

文件:82.64 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件:82.64 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件:86.45 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件:86.45 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件:93.48 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件:93.48 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 4 GHz wideband transistor

文件:103.6 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 4 GHz wideband transistor

文件:305.82 Kbytes Page:14 Pages

PHILIPS

飞利浦

NPN 4 GHz wideband transistor

文件:103.6 Kbytes Page:16 Pages

JMNIC

锦美电子

BFG3产品属性

  • 类型

    描述

  • 型号

    BFG3

  • 制造商

    pro-power

  • 功能描述

    EXTENSION LEAD, 4WAY, 3M

更新时间:2026-5-19 17:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
23+
NA
1027
专做原装正品,假一罚百!
恩XP
23+
9865
原装正品,假一赔十
恩XP
2450+
SOT223
6540
只做原厂原装正品终端客户免费申请样品
恩XP
25+
SOT-223
30000
代理全新原装现货,价格优势
恩XP
24+
NA
3174
进口原装正品优势供应
PHI
26+
SOT223
12300
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
恩XP
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
恩XP
25+
SOT-223
4500
全新原装、诚信经营、公司现货销售
PHI
25+
SOT223
2987
只售原装自家现货!诚信经营!欢迎来电!
恩XP
24+
1000

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