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BFG3晶体管资料
BFG31别名：BFG31三极管、BFG31晶体管、BFG31晶体三极管
BFG31生产厂家：荷兰飞利浦公司
BFG31制作材料：Si-PNP
BFG31性质：超高频/特高频 （UHF）_宽频带放大 （A）
BFG31封装形式：贴片封装
BFG31极限工作电压：20V
BFG31最大电流允许值：0.1A
BFG31最大工作频率：5GHZ
BFG31引脚数：3
BFG31最大耗散功率：
BFG31放大倍数：
BFG31图片代号：H-99
BFG31vtest：20
BFG31htest：5000000000
- BFG31atest：0.1
BFG31wtest：0
BFG31代换 BFG31用什么型号代替：BFG55,
BFG3价格
参考价格：￥1.8845
型号：BFG31,115 品牌：NXP 备注：这里有BFG3多少钱，2025年最近7天走势，今日出价，今日竞价，BFG3批发/采购报价，BFG3行情走势销售排行榜，BFG3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP 5 GHz wideband transistor DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures | Philips 飞利浦 |   | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 4 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
PNP 5 GHz wideband transistor 文件：228.03 Kbytes Page：9 Pages | Philips 飞利浦 | | ||
封装/外壳：SOT-143R 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ SOT143R 分立半导体产品 晶体管 - 双极（BJT）- 射频 | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor 文件：81.37 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 14 GHz wideband transistor 文件：81.37 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频 | ETC 知名厂家 | ETC | | |
NPN 14 GHz wideband transistor 文件：82.64 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 14 GHz wideband transistor 文件：82.64 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 14 GHz wideband transistor 文件：86.45 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 14 GHz wideband transistor 文件：86.45 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 14 GHz wideband transistor 文件：93.48 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 14 GHz wideband transistor 文件：93.48 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
NPN 4 GHz wideband transistor 文件：103.6 Kbytes Page：16 Pages | JMNIC 锦美电子 | | ||
NPN 4 GHz wideband transistor 文件：305.82 Kbytes Page：14 Pages | Philips 飞利浦 | | ||
NPN 4 GHz wideband transistor 文件：103.6 Kbytes Page：16 Pages | JMNIC 锦美电子 | |
BFG3产品属性
- 类型
描述
- 型号
BFG3
- 制造商
pro-power
- 功能描述
EXTENSION LEAD, 4WAY, 3M
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
7295 |
全新原装正品/价格优惠/质量保障 |
|||
PHI |
23+ |
SOT |
20000 |
全新原装假一赔十 |
|||
恩XP |
25+ |
SOT-223 |
1000 |
原装正品,假一罚十! |
|||
恩XP |
25+ |
SOT-343 |
32360 |
NXP/恩智浦全新特价BFG310W/XR即刻询购立享优惠#长期有货 |
|||
PHI |
24+/25+ |
SOT223 |
950 |
原装正品现货库存价优 |
|||
PHI |
05+ |
SOT223 |
302 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
22+ |
5000 |
||||||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Phillips |
0116dc |
524 |
公司优势库存 热卖中!! |
||||
恩XP |
24+ |
SOT223 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
BFG3规格书下载地址
BFG3参数引脚图相关
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BFG55
- BFG541
- BFG540XR
- BFG540X
- BFG540
- BFG54
- BFG520XR
- BFG520X
- BFG520W
- BFG520
- BFG51
- BFG505XR
- BFG505X
- BFG505W
- BFG505
- BFG480W
- BFG480
- BFG425W
- BFG424W
- BFG424F
- BFG410W
- BFG410
- BFG403W
- BFG35
- BFG34
- BFG33X
- BFG33A
- BFG33
- BFG325W
- BFG325
- BFG32
- BFG310W
- BFG310
- BFG31
- BFG25X
- BFG25AX
- BFG25AW
- BFG25A
- BFG25(A,X)
- BFG235
- BFG23
- BFG21W
- BFG19S(A)
- BFG19S
- BFG198
- BFG197XR
- BFG197X
- BFG197
- BFG196
- BFG195
- BFG194
- BFG193
- BFG19
- BFG17A
- BFG17
- BFG16A
- BFG16
- BFG135A(A)
- BFG135A
- BFG135(A)
- BFG135
- BFG134
- BFG11W
- BFE215
- BFE214
BFG3数据表相关新闻
BFHK-1982+
BFHK-1982+
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进口代理
2022-11-12BFP640H6327XTSA1
RF 晶体管 NPN 4.5V 50mA 40GHz 200mW 表面贴装型 PG-SOT343-3D
2022-11-10BFC233920474
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BFP640INFINEON/英飞凌900019+SOT343原盘原标 一罚十优势现货
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BF998，现货销售，只售原装，兴中扬电子
2019-11-30
DdatasheetPDF页码索引
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