PNP 5 GHz wideband transistor

DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures

RF Manual 16th edition

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

RF Manual 16th edition

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

RF Manual 16th edition

PNP 5 GHz wideband transistor

文件：228.03 Kbytes Page：9 Pages

封装/外壳：SOT-143R 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ SOT143R 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：81.37 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：81.37 Kbytes Page：12 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：82.64 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：82.64 Kbytes Page：12 Pages