NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

RF Manual 16th edition

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

RF Manual 16th edition

封装/外壳：SOT-143R 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ SOT143R 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：81.37 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：81.37 Kbytes Page：12 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：82.64 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：82.64 Kbytes Page：12 Pages

INTERCONNECTS .100??Grid (.018??dia.) Pins SMT Gull Wing Headers & Sockets Single and Double Row

文件：199.28 Kbytes Page：1 Pages

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件：984.54 Kbytes Page：5 Pages

Four wire Kelvin lead measurements

文件：933.59 Kbytes Page：1 Pages

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件：50.19 Kbytes Page：1 Pages

SCREW TYPE SERIES

文件：382.28 Kbytes Page：1 Pages