NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

NPN 14 GHz宽频带晶体管

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

丝印代码：A7；NPN 14 GHz wideband transistor

丝印代码：A7*；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

RF Manual 16th edition

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

RF Manual 16th edition

封装/外壳：SOT-143R 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ SOT143R 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：81.37 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：81.37 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：82.64 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：82.64 Kbytes Page：12 Pages

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Unifor

POWER RECTIFIERS(3.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECIFITERS 3.0 AMPERES 500 -- 1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 70 -100 VOLTS

Voltage Follower

文件：348.91 Kbytes Page：16 Pages

Voltage Follower

文件：348.91 Kbytes Page：16 Pages